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Transistors for Replacing Metal-Oxide-Semiconductor Field-Effect Transistors in Nanoelectronics

**VALUE EXPRESS** Invention Summary: This invention is to replace metal-oxide-semiconductor field effect transistors (MOSFETs) in mainstream silicon based microelectronics with junction field 0effect transistors (JFETs) because of their lower leakage and better scaling to nanoscale dimensions. The electrical properties, materials, and fabrication...

Published: 5/14/2019 | Inventor(s): Mark Miller, Justin Jackson, Divesh Kapoor, Justin Millis

Keywords(s): Electrical Engineering, Energy and Fuels, Materials and Mining, Nanotechnology

Category(s): Hardware, Circuits & Sensors, Semiconductors